Re: [Yaffs] Bad eraseblocks and NAND / ECC layouts

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著者: James Kehl
日付:  
To: yaffs
題目: Re: [Yaffs] Bad eraseblocks and NAND / ECC layouts
> -----Original Message-----
> From: [mailto:yaffs-
> ] On Behalf Of Rong Shen
> Sent: Friday, 29 May 2009 11:57 AM
> To: Noah Fontes
> Cc:
> Subject: Re: [Yaffs] Bad eraseblocks and NAND / ECC layouts
>

...
> 1. completely wipe the flash, data and spare area
> 2. (optional) a read scan of the chip to identify all the blocks
> containing one or more 0s (or ECC errors), and mark them as bad
> 3. write certain patterns to the flash (e.g. 0x00, 0xff, 0x5a, 0xa5
> for byte orientated chip, one pattern for each round), and read back,
> if there's any mismatch or ECC errors for any block, mark it as bad.
> 4. erase the remaining good blocks to be ready for use.
>


This would miss certain classes of error - such as charge leakage (e.g.
the cells will erase or set themselves over a day/week/month/year).

http://lists.openmoko.org/pipermail/community/2007-July/008471.html

James